emx1 / umx1n / imx1 transistors 1/3 general purpose transistors (dual transistors) emx1 / umx1n / imx1 ! !! ! features 1) two 2sc2412k chips in a emt or umt or smt package. 2) mounting possible with emt3 or umt3 or smt3 automatic mounting machines. 3) transistor elements are independent, eliminating interference. 4) mounting cost and area can be cut in half. ! !! ! structure epitaxial planar type npn silicon transistor ! !! ! equivalent circuit emx1 / umx1n imx1 (3) (2) (1) (4) (6)(5) tr 2 tr 1 (3) (2) (1) (4) (6)(5) tr 2 tr 1 the following characteristics apply to both tr 1 and tr 2. ! !! ! absolute maximum ratings (ta = 25 c) parameter symbol limits unit v cbo 60 v 50 v v v ceo v ebo 7 i c ma 150 tj 150 ?c tstg ?55+ 150 ?c p c emx1, umx1n 150 (total) mw imx1 300 (total) ? 1 ? 2 collector-base voltage collector-emitter voltage emitter-base voltage collector current junction temperature storage temperature power dissipation ? 1 120mw per element must not be exceeded. ? 2 200mw per element must not be exceeded. ! !! ! external dimensions (units : mm) rohm : emt6 emx1 rohm : umt6 eiaj : sc-88 umx1n abbreviated symbol : x1 abbreviated symbol : x1 abbreviated symbol : x1 rohm : smt6 eiaj : sc-74 imx1 each lead has same dimensions each lead has same dimensions each lead has same dimensions 0to0.1 ( 6 ) 2.0 1.3 0.9 0.15 0.7 0.1min. 2.1 0.65 0.2 1.25 ( 1 ) 0.65 ( 4 ) ( 3 ) ( 2 ) ( 5 ) ( 6 ) ( 5 ) ( 4 ) 0.3to0.6 0.15 0.3 1.1 0.8 0to0.1 ( 3 ) 2.8 1.6 1.9 2.9 0.95 ( 2 ) 0.95 ( 1 ) 0.22 1.2 1.6 ( 1 ) ( 2 ) ( 5 ) ( 3 ) ( 6 ) ( 4 ) 0.13 0.5 0.5 0.5 1.0 1.6
emx1 / umx1n / imx1 transistors 2/3 ! !! ! electrical characteristics (ta = 25 c) parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce (sat) cob min. 60 50 7 ? ? 120 ? ? ? ? ? ? ? ? ? 2 ? ? ? 0.1 0.1 560 0.4 3.5 vi c = 50a i c = 1ma i e = 50a v cb = 60v v eb =7 v v ce = 6v, i c = 1ma i c /i b = 50ma/5ma v v a a ? v pf typ. max. unit conditions f t ? 180 ? v ce = 12v, i e =? 2ma, f = 100mhz v cb = 12v, i e = 0a, f = 1mhz mhz ? collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio transition frequency collector-emitter saturation voltage output capacitance ! !! ! packaging specifications package code tn t110 3000 3000 taping basic ordering unit (pieces) umx1n t2r 8000 emx1 imx1 type ! !! ! electrical characteristic curves 0 0.1 0.2 0.5 2 20 50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 5 10 v ce = 6v collector current : i c ( ma) base to emitter voltage : v be (v) fig.1 grounded emitter propagation characteristics 25?c ?55?c ta=100?c 0 20 40 60 80 100 0.4 0.8 1.2 1.6 2.0 0 collector current : i c (ma) collector to emitter voltage : v ce (v) 0.05ma 0.10ma 0.15ma 0.25ma 0.30ma 0.35ma 0.20ma ta=25?c i b =0a 0.40ma 0.50ma 0.45ma fig.2 grounded emitter output characteristics ( i ) 0 0 2 8 10 4 8 12 16 4 6 20 i b =0a ta=25?c collector current : i c (ma) collector to emitter voltage : v ce (v) 3a 6a 9a 12a 15a 18a 21a 24a 27a 30a fig.3 grounded emitter output characteristics ( ii )
emx1 / umx1n / imx1 transistors 3/3 0.2 20 10 0.5 1 2 5 10 20 50 100 200 50 100 200 500 v ce =5v 3v 1v ta=25?c dc current gain : h fe collector current : i c (ma) fig.4 dc current gain vs. collector current ( i ) 0.2 0.5 1 2 5 10 20 50 100 200 20 10 50 100 200 500 25?c ?55?c ta=100?c v ce = 5v dc current gain : h fe collector current : i c (ma) fig.5 dc current gain vs. collector current ( ii ) 0.2 0.5 1 2 5 10 20 50 100 200 0.01 0.02 0.05 0.1 0.2 0.5 i c /i b =50 20 10 ta=25?c collector saturation voltage : v ce (sat) ( v) collector current : i c (ma) fig.6 collector-emitter saturation voltage vs. collector current 0.2 collector saturation voltage : v ce (sat) (v) collector current : i c (ma) 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 i c /i b =50 20 10 ta=25 ?c fig.7 collector-emitter saturation voltage vs. collector current ( i ) 0.2 collector saturation voltage : v ce (sat) (v) collector current : i c (ma) 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 i c /i b =10 ta=100?c 25?c ?55?c fig.8 collector-emitter saturation voltage vs. collector current ( ii ) collector saturation voltage : v ce (sat) (v) collector current : i c (ma) 0.2 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 i c /i b =50 ta=100?c 25?c ?55?c fig.9 collector-emitter saturation voltage vs. collector current ( iii ) 50 ?0.5 ?1 ?2 ?5 ?10 ?20 ?50 ?100 100 200 500 ta=25?c v ce =6v emitter current : i e (ma) transition frequency : f t (mhz) fig.10 gain bandwidth product vs. emitter current 0.2 0.5 1 2 5 10 20 50 1 2 5 10 20 cib cob collector to base voltage : v cb (v) emitter to base voltage : v eb (v) collector output capacitance : cob (pf) emitter input capacitance : cib (pf) fig.11 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage ta=25 ?c f = 1mhz i e =0a i c =0a ?0.2 ?0.5 ?1 ?2 ?5 ?10 10 20 50 100 200 emitter current : i e (ma) fig.12 base-collector time constant vs. emitter current base collector time constant : cc r bb' (ps) ta=25 ?c f=32mh z v cb =6v
appendix appendix1-rev1.0 the products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document use silicon as a basic material. products listed in this document are no antiradiation design. about export control order in japan products described herein are the objects of controlled goods in annex 1 (item 16) of export trade control order in japan. in case of export from japan, please confirm if it applies to "objective" criteria or an "informed" (by miti clause) on the basis of "catch all controls for non-proliferation of weapons of mass destruction.
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